fdfs2p102 fdfs2p102 rev. e fdfs2p102 integrated p-channel mosfet and schottky diode october 2000 ? 2000 fairchild semiconductor international mosfet maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage -20 v v gss gate-source voltage 20 v i d drain current - continuous ( note 1a ) -3.3 a - pulsed -20 power dissipation for dual operation 2 power dissipation for sin g le operation ( note 1a ) 1.6 (note 1b) 1 p d ( note 1c ) 0.9 w t j , t stg operating and storage temperature range -55 to +150 c schottky diode maximum ratings t a =25 o c unless otherwise noted v rrm repetitive peak reverse voltage 20 v i o average forward current (note 1a) 1a package marking and ordering information device marking device reel size tape width quantity fdfs2p102 fdfs2p102 13 12mm 2500 units general description the fdfs2p102 combines the exceptional performance of fairchild's high cell density mosfet with a very low forward voltage drop schottky barrier rectifier in an so-8 package. this device is designed specifically as a single package solution for dc to dc converters. it features a fast switching, low gate charge mosfet with very low on-state resistance. the independently connected schottky diode allows its use in a variety of dc/dc converter topologies. applications ? dc/dc converters load switch motor drives features ?3.3 a, ?20 v. r ds(on) = 0.125 ? @ v gs = ?10 v r ds(on) = 0.200 ? @ v gs = ?4.5 v. v f < 0.39 v @ 1 a (t j = 125 o c). v f < 0.47 v @ 1 a. v f < 0.58 v @ 2 a. schottky and mosfet incorporated into single power surface mount so-8 package. electrically independent schottky and mosfet pinout for design flexibility. a a s g c c d d pin 1 8 1 7 2 6 3 5 4 a a s g c c d d
fdfs2p102 fdfs2p102 rev. e electrical characteristics t a = 25 c unless otherwise noted s y mbol parameter test conditions min t yp max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -20 v -1 i dss zero gate voltage drain current v ds = - 16 v, v gs = 0 v t j = 55 c -10 a i gssf gate-body forward leakage v gs = 20 v, v ds = 0 v 100 na i gssr gate-body reverse leakage v gs = -20 v, v ds = 0 v -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -1 -1.4 -2 v v gs = -10 v, i d = -3.3 a 0.100 0.125 r ds(on) static drain-source on-resistance v gs = -4.5 v, i d = -2.5 a 0.167 0.2 ? i d(on) on-state drain current v gs = -10 v, v ds = -5 v -10 a g fs forward transconductance v ds = -10 v, i d = -3.3 a 5 s dynamic characteristics c iss input capacitance 270 pf c oss output capacitance 150 pf c rss reverse transfer capacitance v ds = -10 v, v gs = 0 v, f = 1.0 mhz 45 pf switching characteristics (note 2) t d(on) turn-on delay time 8 16 ns t r turn-on rise time 7 14 ns t d(off) turn-off delay time 17 27 ns t f turn-off fall time v dd = -15 v, i d = -1 a, v gs = -10 v, r gen = 6 ? 10 1.8 ns q g total gate charge v ds = -5 v, i d = -3.3 a, v gs = -10 v, 710nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -1.3 a v sd drain-source diode forward voltage v gs = 0 v, i s = -1.3 a (note 2) -0.8 -1.2 v schottky diode characteristics t j = 25 c 250 ua i r reverse leakage v r = 20 v t j = 125 c 18 ma v f forward voltage i f = 1 a t j = 25 c 0.47 v t j = 125 c 0.39 i f = 2 a t j = 25 c 0.58 t j = 125 c 0.53 thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 78 r jc thermal resistance, junction-to-case (note 1) 40 notes: 1: r ja is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mou nting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. scale 1 : 1 on letter size paper 2: pulse test: pulse width 300 s, duty cycle 2.0% a) 50 c/w when mounted on a 1 in 2 pad of 2 oz. copper. b) 105 c/w when mounted on a 0.04 in 2 pad of 2 oz. copper. c) 125 c/w when mounted on a minimum pad.
fdfs2p102 fdfs2p102 rev. e typical characteristics 0.8 1 1.2 1.4 1.6 1.8 2 0 102030405060 i d , dirain current (a) r ds(on) , normalized drain-source on-resistance v gs = 4.0v 5.0v 6.0v 7.0v 10v 4.5v 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 7.6a v gs = 10v 0 10 20 30 40 50 60 23456 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , body diode forward voltage (v) i s , reverse drain current (a) v gs = 0v t a = 125 o c 25 o c -55 o c 0 0.01 0.02 0.03 0.04 0.05 0.06 345678910 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 3.8a t a = 125 o c t a = 25 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 012345 0 4 8 12 16 20 -v , drain-source voltage (v) - i , drain-source current (a) ds d -4.5v -4.0v -6.0v -3.5v v = -10v gs -7.0v -5.0v
fdfs2p102 fdfs2p102 rev. e typical characteristics (continued) figure 7. gate-charge characteristics. figure 8. capacitance characteristics. figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient themal response will change depending on the circuit board design. 0 2 4 6 8 10 0 5 10 15 20 25 30 35 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 7.6a v ds = 10v 20v 40v 0 400 800 1200 1600 2000 2400 0 1020304050607080 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 10. schottky diode reverse current. figure 9. schottky diode forward voltage . 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.2 0.5 1 2 5 10 v , forward voltage (v) i , forward current (a) 25 c f f t = 125 c j 0 5 10 15 20 0.0001 0.0002 0.0005 0.001 v , reverse voltage (v) i , reverse current (a) r r t = 25 c j 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , time (sec) transient thermal resistance r(t), normalized effective 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 duty cycle, d = t /t 1 2 r (t) = r(t) * r r =135 c/w ja ja ja t - t = p * r (t) ja a j p(pk) t 1 t 2
soic(8lds) packaging configuration: figure 1.0 components leader tape 1680mm minimum or 210 empty pockets trailer tape 640mm minimum or 80 empty pockets soic(8lds) tape leader and trailer configuration: figure 2.0 cover tape carrier tape note/comments packaging option soic (8lds) packaging information standard (no flow code) l86z f011 packaging type reel size tnr 13" dia rail/tube - tnr 13" dia qty per reel/tube/bag 2,500 95 4,000 box dimension (mm) 343x64x343 530x130x83 343x64x343 max qty per box 5,000 30,000 8,000 d84z tnr 7" dia 500 184x187x47 1,000 weight per unit (gm) 0.0774 0.0774 0.0774 0.0774 weight per reel (kg) 0.6060 - 0.9696 0.1182 f63tn label esd label 343mm x 342mm x 64mm standard intermediate box esd label f63tnr label sample f63tnlabel lot: cbvk741b019 fsid: fds9953a d/c1: d9842 qty1: spec rev: spec: qty: 2500 d/c2: qty2: cpn: n/f: f (f63tnr)3 f 852 nds 9959 soic-8 unit orientation f 852 nds 9959 pin 1 static dissipative embossed carrier tape
? 1998 fairchild semiconductor corporation dimensions are in millimeter pkg type a0 b0 w d 0 d1 e1 e2 f p1 p0 k0 t wc tc soic (8lds) (12mm) 6.50 +/-0.10 5.30 +/-0.10 12.0 +/-0.3 1.55 +/-0.05 1.60 +/-0.10 1.75 +/-0.10 10.25 min 5.50 +/-0.05 8.0 +/-0.1 4.0 +/-0.1 2.1 +/-0.10 0.450 +/- 0.150 9.2 +/-0.3 0.06 +/-0.02 p1 a0 d1 p0 f w e1 d0 e2 b0 tc wc k0 t dimensions are in inches and millimeters tape size reel option dim a dim b dim c dim d dim n dim w1 dim w2 dim w3 (lsl-usl) 12mm 7" dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 0.606 11.9 15.4 12mm 13" dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 0.606 11.9 15.4 see detail aa dim a max 13" diameter option 7" diameter option dim a max see detail aa w3 w2 max measured at hub w1 measured at hub dim n dim d min dim c b min detail aa notes: a0, b0, and k0 dimensions are determined with respect to the eia/jedec rs-481 rotational and lateral movement requirements (see sketches a, b, and c). 20 deg maximum component rotation 0.5mm maximum 0.5mm maximum sketch c (top view) component lateral movement typical component cavity center line 20 deg maximum typical component center line b0 a0 sketch b (top view) component rotation sketch a (side or front sectional view) component rotation user direction of feed soic(8lds) embossed carrier tape configuration: figure 3.0 soic(8lds) reel configuration: figure 4.0 so ic -8 t ape and reel data, continued july 1999, rev. b
soic-8 (fs pkg code s1) 1 : 1 scale 1:1 on letter size paper di me n si o n s s h ow n be l ow a re in : inches [millimeters] part weight per unit (gram): 0.0774 soic-8 package dimensions september 1998, rev. a 9 ?2000 fairchild semiconductor international
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchilds products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification p roduct status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. qfet? qs? qt optoelectronics? quiet series? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? uhc? fastr? globaloptoisolator? gto? hisec? isoplanar? microwire? optologic? optoplanar? pop? powertrench ? rev. f1 acex? bottomless? coolfet? crossvolt? dome? e 2 cmos tm ensigna tm fact? fact quiet series? fast ? vcx?
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